1550 nm Compatible Ultrafast Photoconductive Material Based on a GaAs/ErAs/GaAs Heterostructure
نویسندگان
چکیده
The sub-bandgap absorption and ultrafast relaxation in a GaAs/ErAs/GaAs heterostructure are reported. infrared 1550 nm-excited photo-response studied by Fourier transform spectrometry time-domain pump–probe technique. two peaks located at 2.0 (0.62 eV) 2.7 µm (0.45 originated from the ErAs/GaAs interfacial Schottky states ErAs itself, respectively. photo-excited carrier lifetime, excited using nm light, is measured to be as low 190 fs for heterostructure, making it promising material 1550-nm-technology-compatible, high critical-breakdown-field THz devices. mechanism proposed functionality of revealed.
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ژورنال
عنوان ژورنال: Advanced Optical Materials
سال: 2021
ISSN: ['2195-1071']
DOI: https://doi.org/10.1002/adom.202100062